IGBT Switch Driver Model CP-ECD-7W-E(x)D(y)-(z)U

Features:

* Dual channel driver   * Highly integrated plug-and-play solution   * Interface for 3.3, 5V or 15V logic level   * +15V/-15V gate drive   * Peak gate drive current +50A/-50A   * Separate gate current paths (on/off)   * Suitable for IGBTs up to 1700V   * Direct or half bridge mode   * Flexible fault management   * 2-level and multi-level topologies   * IGBT desaturation protection   * Isolated DC/DC converter   * 2 x 7.5W output power   * Power supply under-voltage lockout   * Power input over-current protection   * Power input over-voltage protection   * Superior EMI emissions and susceptibility   * Reliable, long service life   * Easy mounting directly onto IGBT package

Specifications:     Parameter Min Typical Max Unit Nominal supply voltage 14.75 15 18 V Supply current @ fIN 0Hz   200   mA Supply current, full load   1.25   A Output power per channel   ( Note 1 )   7.5   W Gate voltage +/-13.5 +/-15 +/-16 V Peak output current (gate current) -50   +50 A Switching frequency fIN   ( Note 2 ) 0   250 kHz Minimum ON or OFF period (factory programmable)   600   nS Turn-on and Turn-off delay   <300   nS Fault reporting latency   <300   nS Blocking time (after fault)   1.5   mS Creepage distance primary-secondary   22   mm Dielectric test voltage  ( Note 3 ) 4400   10,000 VAC Partial discharge extinction voltage   3000   Vpeak dv/dt immunity, input to output   75   kV/µS Operating temperature -20   +85 °C Note 1: 9 Watt version available on request Note 2: Maximum operating frequency may be limited by output power,            half bridge dead time, or power dissipation in gate resistors.            Optional heatsinking is available for gate resistors. Note 3: Higher isolation voltages available Factory set options:       Desaturation threshold 1 to 11 Volts, default 7.5 V   Half Bridge Mode Dead time 200nS to 10µS, default 3 uS   Input Logic Level 3.3, 5, or 15V, default 5 Volts   Enhance gate resistor 0.1 Ohms to 10 Ohms, default 1.1 ohm   Deplete gate resistor 0.1 Ohms to 10 Ohms, default 1.1 ohm Part Number Derivation: Field: 1 - 2 - 3 - 4 - 5   CP - ECD - 7W - ExDy - zU 1 CogniPower 2 Econo-Dual style IGBT Module 3 Watts per gate, 7 Watts is now standard 4 Enhance and deplete resistor values in ohms x=Enhance y=Deplete 1 ohm is default for both 5 z=Dead time in micro seconds, default is 3 micro seconds Options:          default is gentle OFF local action upon error Note -HS option makes field changing of gate resistors more difficult. - mtX X= minimum on or off time in ns, default is 600ns -DTn n= desaturation threshold in volts, default is 7.5 v -ML for multi-level systems, error reporting and gate control are independent, -HS with heat sink for enhance and deplete resistors -HV High isolation voltage option, standard is 4400 test voltage for 1700 volt operation Contact factory with complete part number for price and availability. Evaluation systems supplied with matching connector, TycoŽ 5-103958-8, or equivalent. Specifications Rev D   January 2012 Specifications are subject to change without notice.